BER degradations caused by switching in digital mobile radio systems using base station diversity.

  • Glance B.

The degradation is caused by the discontinuities of the signal received by the mobile when transmission is switched from one base station to another. To evaluate this effect, a simple statistical model has been devised for the spatial variations of shadow fading. It consists of a one-parameter spatial autocorrelation function ...

Methods in traffic calculations.

  • Jagerman D.

This paper presents practical formulae and computer programs for the following traffic related problems: determination of offered load; determination of number of trunks; equivalent random method and Hayward's method; the three moments match (construction of interrupted Poisson stream); day-to-day load variation both time and call congestionsl and, the analysis of ...

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy.

  • Forrest S.
  • Johnston W.
  • Tu C.

We report the first epitaxial semiconductor-insulator-semiconductor (SIS) double heterostructures using III-V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1-xF2/InP (001), were grown by molecular-beam epitaxy and have lattice- mismatches of -6.9% and +2.0%, respectively. SIS structures have potential applications as electronic and photonic devices, especially in monolithic integrated optics, since ...

The iron-proximal histidine linkage and protein control of oxygen binding in hemoglobin: A transient Raman study.

  • Friedman J.
  • Ikeda-Saito M.
  • Scott T.
  • Stepnoski R.
  • Yonetani T.

Using time resolved resonance Raman scattering, we have studied the iron-proximal histidine linkage in transient species of hemoglobin (Hb) occurring within nanoseconds (ns) or longer of photoinduced ligand dissociation. Under these conditions the protein structure surrounding the heme, although destabilized, is still characteristic of the initial ligand bound species. Our ...

pH dependent voltammetry of iridium oxide films.

  • Dautremont-Smith W.
  • Lauks I.
  • Yuen M.

We report studies of Anodic Iridium Oxide Films (AIROF's) and Sputtered Iridium Oxide Films (SIROF's) by voltammetric analysis and open circuit pH response. The voltage and pH dependent double injection of ions and electrons into the films is described in terms of a model of an equilibrium change in electronic ...

Rutherford scattering/channeling analysis of semiconductor interfaces.

  • Feldman L.

High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews have described the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this extended abstract is to provide the reader with ...

Characteristics of tin and cadmium doping in liquid phase epitaxial grown InGaAsP layers.

  • Ballman A.
  • Degani J.
  • Tamari N.

The characteristics of tin and cadmium doping of liquid phase epitaxial grown InGaAsP layers have been investigated. A change in the solid composition of the quaternary is introduced as a result of the perturbation of the liquid solution composition by the dopants. The leads to a change in the lattice ...

Wavelength conversion with excimer laser.

  • Bokor J.
  • Bucksbaum P.
  • Eichner L.
  • Freeman R.
  • Storz R.

Harmonic generation was studied using a high powered, ultrashort pulse KrF excimer laser. Third, fifth, and seventh harmonic outputs were observed at 82.8 nm, 49.7 nm, and 35.5 nm. The nonlinear interaction took place at the intersection of the laser focus with a pulsed, supersonic gas jet expansion.

Phosphorus out-diffusion during high temperature anneal of phosphorus doped polycrystalline silicon and SiO(2).

  • Lloyd E.
  • Murarka S.

Loss of phosphorus by evaporation, from doped polysilicon and SiO2 films, due to high temperature anneals has been investigated by use of neutron activation analysis technique. It is found that large amount of phosphorus, as much as 99%, are lost from polysilicon films during inert ambient anneals. The loss is ...

Dynamic spectra of 1.3 micron InP lasers under Pseudo-random word modulation.

  • Shen T.

The dynamic spectra under low-duty-cycle pulse modulation, and 180 Mbit/s and 432 Mbit/s pseudo-random pulse modulation were studied for buried-heterostructure and channeled substrate InP lasers. The average dynamic spectra of these lasers differ from their DC spectra, and also show variation between low- duty-cycle pulse modulation and pseudo-random pulse modulation. ...

Identification and characterization of a palladium ammine hydroxide complex: A preparative and replenishing agent for the Bell System palladium electrodeposition chemistry, Pallabell.

  • Abys J.
  • Okinaka Y.

A palladium ammine hydroxide complex, synthesized as an improved preparative and replenishing compound for the Bell System palladium electrodeposition technology "Pallabell", has been identified and characterized for its structure and solution chemistry. Unlike palladium chloride, PdCl(2,) which was originally used, this new compound is highly soluble, (~250 g/l-Pd), dissolves rapidly ...

The non-ergodic Jackson network.

  • Goodman J.
  • Massey W.

We generalize Jackson's theorem to the non-ergodic case. Here, despite the fact that the entire Jackson network will not achieve steady state, it is still possible to determine the maximal subnetwork that does. We do so by formulating and algorithmically solving a new nonlinear throughput equation. These results, together with ...

Intelligent robot system for inspection and testing of electronic devices.

  • Beni G.
  • Hackwood S.
  • Trimmer W.
  • Zuber J.

The system consists of a Seiko RT-3000 robot, an Automatix Autovision II vision system, two CCD Panasonic cameras plus peripherals. The latter include two testing probe-stations, a passive-hand with magnetic pick-up fingertips, racks and pallets. The system is interconnected through serial RS-232 ports and I/O switches. The system is capable ...

Properties of LPCVD aluminum films produced by disproportionation of aluminum monochloride.

  • Contolini R.
  • Gallagher P.
  • Hopkins J.
  • Levy R.
  • Schrey F.

This study describes the properties of LPCVD Al deposited by the disproportionation of AlCl on Si and SiO(2) substrates. In contrast to the organometallic LPCVD Al processes, this deposition technique offers advantages of a lower hazard potential and possibly the ability of simultaneously incorporating desired dopants such as Cu and ...

High resistivity in InP helium bombardment.

  • Feldman L.
  • Focht M.
  • Macrander A.
  • Schwartz B.

Helium implants over a fluence range of 10(11) to 10(16) ions/cm (2), reproducibly form high resistivity regions in both p- type and n-type InP. Average resistivities of greater than 10(9) ohm-cm for p-type InP and of 10(3) ohm-cm for n-type InP are reported. Results are presented of a Monte Carlo ...

Computer simulation of a CF(4) plasma etching silicon. II. Sensitivity analysis.

  • Edelson D.
  • Flamm D.

Sensitivity analysis applied to reaction kinetics is being increasingly recognized as a powerful tool for identifying the controlling steps in a complex mechanism. This analysis can be used to improve a simulation by indicating areas where further refinement will be most effective. The technique has been applied to model silicon ...

Atojoule MOSFET logic devices using low voltage swings and low temperature.

  • Tewksbury S.

Previous estimates of the performance limits of MOSFET logic devices, including the possibility of low temperature operation, have used the conventional static electrical behavior as the starting point. Typically, such studies conclude that the minimum voltage swing is ~200mV, leading to practical limits on power dissipation and switching speed that ...

Fabrication of low dark current planar photodiodes using an open-tube method for Zn-diffusion into InP and In(0.53)Ga(0. 47)As.

  • Camlibel I.
  • Chin A.
  • Guggenheim H.
  • Singh S.
  • Van Uitert L.
  • Zydzik G.

A process for fabricating planar low dark current InP and In (0.53)Ga(0.47)As/InP based photodetectors is described. The process utilizes sandwich films of ZnF(2) and a SiO(2), borosilicate, or Al(2)O(3) encapsulant, which yield localized p-n junctions in an open tube air-ambient. Dark currents as low as 5 x 10 (-12)A and ...

Photoelectrochemical etching profiles and applications to front- to-back mask alignment.

  • Cheng J.
  • Kohl P.

The profiles of features etched photoelectrochemically in n- InP are studied to determine the factors which govern their distortions and to determine the factors limiting spatial resolution for etch depths in the 100-200 micron range. The optimal conditions for etching straight grooves using laser light are determined.