Optical Fiber Up-Taper Backreflector for Laser Transmitter Evaluation

  • Benner A.
  • Fishman D.
  • Presby H.

INTRODUCTION: As optical communications systems progress to higher data rates, reflection effects become increasingly detrimental to system performance. Reflections cause two types of system degradation. First, optical feedback into the laser cavity causes amplitude and phase fluctuations, introducing errors in the transmitted bit stream. Second, when more than one reflection ...

ISDN-ASPEN - An ISDN Performance Evaluation Tool

  • Chuang W.
  • Tsai C.

TO characterize the end-to-end performance of AT&T's ISDN BRI services, a system called ISDN-ASPEN was developed. ISDN-ASPEN is a flexible, automatic data acquisition and analysis system built on the UNIX(R) Operating System. This system has the ISDN interface which provides the capability to measure voice and data services performance at ...

Fundamental Studies in Plastic Packaging of Microelectronic Devices

  • Manzione L.

An ongoing effort seeks to establish a fundamental understanding of the transfer molding process, the most important processing method for packaging integrated circuit devices.

Acoustic Studies of Single Crystal High Temperature Superconductors

  • Golding B.
  • Haemmerle W.
  • Schneemeyer L.

The acoustic properties of single crystals of the high temperature superconductor YBa sub 2 Cu sub 3 O sub 7 have been measured at temperatures between 0.1 and 300K for frequencies near 10 sup 3 and 10 sup 9 Hz. In the GHz regime, longitudinal modes have been studied for ...

Polarization and Resonance in Magnetic X-Ray Scattering

  • Gibbs D.
  • Harshman D.
  • Isaacs E.
  • Mcwhan D.
  • Mills D.
  • Vettier C.

The separation of orbital and spin magnetization densities in Holmium is demonstrated. This separation is facilitated by the polarization dependent magnetic x-ray scattering cross-section and the high degree of linear polarization of the synchrotron beam. A fifty-fold resonant enhancement of the cross-section, as well as resonant integer harmonics, are observed ...

Precipitation of Group V Elements and Ge in SiO sub 2 and Their Drift in a Temperature Gradient

  • Celler G.
  • Kosinski S.
  • Sheng T.
  • Trimble L.
  • West K.

It is shown that P, Sb, and Ge ions implanted in SiO sub 2, precipitate into spherical clusters of up to a 1000angstroms, when heat treated in an oxygen-free ambient. This behavior is similar to that reported earlier for As implants. The clusters can be detected directly by transmission electron ...

Inorganic-Contamination-Induced Corrosion of Experimental Hybrid Circuits During Bias-Humidity-Temperature Testing

  • Ibidunni A.
  • Scarff P.

Reliability testing is routinely used as a tool for evaluating the performance of experimental hybrid-circuit processes, materials, and technologies. High stress levels employed in the laboratory accelerate degradation mechanisms so that failures occur much more rapidly than they would under field-use conditions.

Variable Stoichiometry of the GaAs (001) - c(4x4): In Situ X-Ray Scattering Study

  • Massies J.
  • Pinchaux R.
  • Robinson I.
  • Sauvage-Simkin M.

The atomic structure of the c(4x4) reconstruction of GaAs(001) has been studied by grazing incidence X-Ray diffraction using synchrotron radiation on surfaces prepared in-situ by molecular beam epitaxy. A total of 46 independent reflexions has been collected among which 40 pure surface peaks with fractional indices carry the information on ...

Optical Studies of the 2D Electron Gas in GaAs in High Magnetic Fields

  • Broido D.
  • English J.
  • Goldberg B.
  • Gossard A.
  • Heiman D.
  • Pinczuk A.
  • Tu C.

We report optical emission and absorption spectra of modulation- doped GaAs multiple quantum wells to fields of 30T and temperatures >= 0.35K. Two regions are studied in detail. First, in the region of fractional filling factor nu = 2/3, we observe an unusual temperature dependence in the emission spectra associated ...

GaAs Radiation Hardened SRAM Design Techniques

  • Barber F.

The GaAs technology that will be examined in this paper is the Selectively Doped Hetrojunction Transistor (SDHT) (also called MODFET, TEGFET, HEMT, or HIGFET). The physical structure of this device is shown in Figure 1.

k x k Thinning

  • O'Gorman L.

A commonly used method for thinning regions in binary images consists of examining kernels of 3x3 pixels throughout an image, and erasing the center pixel if the thinning criteria are met. The kxk thinning method is a generalization of the 3x3 method, where kxk kernels are examined and a cent ...

Parameterized Types for C++

  • Stroustrup B.

Type parameterization is the ability to define a type in terms of another, unspecified, type. Versions of the parameterized type may then be created for several particular parameter types. A language supporting type parameterization allows specification of general container types such as list, vector, and associative array where the specific ...

Power Feed Equipment for the SL Undersea Lightwave Cable

  • Calvo O.
  • Hamilton B.
  • Layendecker R.
  • Slak W.
  • Zweig W.

The PFE (Power Feed Equipment) for the SL Undersea Lightwave Cable converts 48 volt battery power to a constant current of 1.6 amperes at voltages up to 7500 volts to power the undersea amplifiers. Two series aiding SL PFEs at opposite ends of a cable can supply 33.6 watts of ...

The 1990 National Electrical Code - Issues

  • Kaufman S.

This paper will review the important proposals under consideration by Code Making Panel 16 of The National Electrical Code Committee for the 1990 National Electrical Code. Panel 16 is responsible for electrical and fire safety requirements for telecommunications, data communications, fiber optics, fire alarm and cable TV circuits including wire ...

Speech Recognition Based on Pattern Recognition Techniques

  • Rabiner L.

Algorithms for speech recognition can be dichotomized into two broad classes - namely pattern recognition approaches and acoustic phonetic approaches. To date, the greatest degree of success in speech recognition has been obtained using pattern recognition paradigms.

Optical Digital Computers - Devices and Architectures

  • Huang A.

Advances in computation are being limited by communication considerations. The fastest transistors switch in 5 picoseconds whereas the fastest computer runs with a 5 nanosecond clock. This three orders of magnitude disparity in speed can be traced to communication constraints such as connectivity and bandwidth.

Word Line Clocked Repeater

  • Mclellan S.

A clocked repeater circuit inserted in a word line of a memory device for assisting the charging and discharging of the work line in response to a clock signal and a corresponding word line driver. The clocked repeater reduces the cycle time of the memory by discharging the word line ...

Laser Programmable Decoder Circuit

  • Mclellan S.

A novel spare decoding circuit with no DC power drain during active and standby memory cycles. Fewer transistors are required than required in the prior art. However, two fuses must be cut to program each circuit. Additionally, only one gate delay is introduced into the decoding path.

High Performance Switching Technologies

  • Pashan M.

In recent years considerable research in switching technology has focused on switching fabrics. This resulted in an explosion of fabric alternatives for the public broadband network. This session presents an overview of some of the high performance fabric alternatives and identifies some of the switching issues in a public broadband ...

Structure of Highly Perfect Semiconductor Stained-Layer Superlattices: High-Resolution X-Ray Diffraction and Computer Similation Studies

  • Gershoni D.
  • Hamm R.
  • Panish M.
  • Temkin H.
  • Vandenberg J.

High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices have been carried out using a four-crystal monochromator. A wide asymmetric range of extremely sharp higher order x-ray satellite peaks is observed indicating well-defined strained-layer superlattices with abrupt interfaces. Using a kinematical diffraction step model which assumes ideally sharp interfaces, structural parameters ...