0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 mum Fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 mum partially depleted (PD) devices. These FD devices present a state of the art NFmin, of 0.8 dB and high G(ass) of 13 dB at 6 GHz, at V-ds = 0.75 V, P-dc