The quaternary (AlxGa1-x)(0.5)In0.5P(0 less than or equal to x less than or equal to 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices.
We report measurements of the C-12/C-13 abundance ratio in the three galactic regions G 333.0-0.4, NGC 6334 A and G 351.6-1.3 from observations of the (CI)-C-12 P-3(2) --> P-3(1) transition and
The MOVPE growth of (InGa)(NAs)/GaAs structures with room temperature photoluminescence (RTPL) in 1-1.59 Irm range is presented.
(Rb,Ba)BiO sub 3 is a model material for the application of molecular beam epitaxy (MBE) to the growth of the superconducting perovskites.
We introduce network coding in an elementary way, through a combinatorial/algebraic framework, and discuss connections with classical coding theory.
An EDFA covering the full C-band has been operated with a record output power of +33 dBm, owing to a new 50-mum pump design incorporating 100-mum diodes
A new W-band transceiver circuit design is introduced for wireless high speed data transmission applications that relies entirely on commercially available 77 GHz automotive radar MMIC (monolithic
High system performances (-31 dBm), over wide temperature range, were demonstrated by a monolithic in-line transmit-receive-device, designed for single fibre, bi-directional transmission in full-du
As we move to the 0.18 micron node and beyond, the dominant trend in device and process technology is a simple continuation of several decades of scaling.
Devices that allow physicians to monitor critical health parameters remotely decrease medical costs and enable chronic patients to lead more normal lives.
