The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 mum Fully depleted (FD) silicon-on-insulator (SOI) devices an
This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-mum BiCMOS process.
This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-μm BiCMOS process.
The AlGaAs/GaAs selectively doped heterostructure transistor (SDHT) is ideally suited to a submicron recess etch gate process, since the channel of the FET is confined to a two-dimension electron g
A cursory examination of a visible laser beam incident on any refracting or reflecting system will show that energy is scattered from the laser beam.
We report the performances of a 0.7-µm InP/GaInAs DHBT developed in III-V Lab demonstrating both fT and fMAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer.
The first 10 Gbit/s DWDM transmission at 12.5 GHz spacing without polarisation division multiplexing or polarisation interleaving is demonstrated.
We demonstrate the first 10Gb/s DWDM transmission at 12.5GHz spacing without polarization division multiplexing or polarization interleaving.
We demonstrate the first 10Gb/s DWDM transmission at 12.5GHz spacing without polarization division multiplexing or polarization interleaving.
There has been considerable interest over the last several years in convenient sources of THz radiation.
